Self-assembled homojunction In2O3 transparent thin-film transistors
Identifieur interne : 000562 ( Main/Repository ); précédent : 000561; suivant : 000563Self-assembled homojunction In2O3 transparent thin-film transistors
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Abstract
Homojunction transparent thin-film In2O3 transistors were fabricated at room temperature. Self-assembled In2O3 source-channel-drain structures were grown by pulsed electron beam deposition using a shadow mask with a 300 μm diameter wire as an obstacle placed at ∼100 μm distance from the substrate for growing the channel region behind it. The film resistivity varies from ∼7 x 108 Ω cm in the channel region to ∼10-3 Ω cm in the source-drain regions. We explain this fact by the relative depletion of the indium incorporated in the channel region of the film due to the reduced flux of ablated species arriving on the substrate behind the obstacle, leading to a relative enrichment in oxygen compared to the source and drain regions. The gate insulator is a Y2O3 film grown by RF magnetron sputtering. The transistor operates in enhanced mode. The subthreshold swing is ∼0.26 V/decade with an on/off current ratio of 1.5 x 107, and the saturation channel mobility is greater than 45 cm2 V-1 s-1.
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<record><TEI><teiHeader><fileDesc><titleStmt><title xml:lang="en" level="a">Self-assembled homojunction In<sub>2</sub>O<sub>3</sub> transparent thin-film transistors</title><author><name sortKey="Gherendi, Florin" uniqKey="Gherendi F">Florin Gherendi</name><affiliation wicri:level="1"><inist:fA14 i1="01"><s1>National Institute for Lasers, Plasma and Radiation Physics, Plasma Physics and Nuclear Fusion Laboratory, L22, PO Box. MG-36</s1><s2>077125 Bucharest-Magurele</s2><s3>ROU</s3><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>6 aut.</sZ></inist:fA14><country>Roumanie</country><wicri:noRegion>077125 Bucharest-Magurele</wicri:noRegion></affiliation></author><author><name sortKey="Nistor, Magdalena" uniqKey="Nistor M">Magdalena Nistor</name><affiliation wicri:level="1"><inist:fA14 i1="01"><s1>National Institute for Lasers, Plasma and Radiation Physics, Plasma Physics and Nuclear Fusion Laboratory, L22, PO Box. MG-36</s1><s2>077125 Bucharest-Magurele</s2><s3>ROU</s3><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>6 aut.</sZ></inist:fA14><country>Roumanie</country><wicri:noRegion>077125 Bucharest-Magurele</wicri:noRegion></affiliation></author><author><name sortKey="Antohe, Stefan" uniqKey="Antohe S">Stefan Antohe</name><affiliation wicri:level="1"><inist:fA14 i1="02"><s1>Faculty of Physics, University of Bucharest, PO Box MG-11</s1><s2>077125 Bucharest-Magurele</s2><s3>ROU</s3><sZ>3 aut.</sZ><sZ>4 aut.</sZ></inist:fA14><country>Roumanie</country><wicri:noRegion>077125 Bucharest-Magurele</wicri:noRegion></affiliation></author><author><name sortKey="Ion, Lucian" uniqKey="Ion L">Lucian Ion</name><affiliation wicri:level="1"><inist:fA14 i1="02"><s1>Faculty of Physics, University of Bucharest, PO Box MG-11</s1><s2>077125 Bucharest-Magurele</s2><s3>ROU</s3><sZ>3 aut.</sZ><sZ>4 aut.</sZ></inist:fA14><country>Roumanie</country><wicri:noRegion>077125 Bucharest-Magurele</wicri:noRegion></affiliation></author><author><name sortKey="Enculescu, Ionut" uniqKey="Enculescu I">Ionut Enculescu</name><affiliation wicri:level="1"><inist:fA14 i1="03"><s1>National Institute of Materials Physics, PO Box MG-7</s1><s2>077125 Bucharest-Magurele</s2><s3>ROU</s3><sZ>5 aut.</sZ></inist:fA14><country>Roumanie</country><wicri:noRegion>077125 Bucharest-Magurele</wicri:noRegion></affiliation></author><author><name sortKey="Mandache, Nicolae B" uniqKey="Mandache N">Nicolae B. Mandache</name><affiliation wicri:level="1"><inist:fA14 i1="01"><s1>National Institute for Lasers, Plasma and Radiation Physics, Plasma Physics and Nuclear Fusion Laboratory, L22, PO Box. MG-36</s1><s2>077125 Bucharest-Magurele</s2><s3>ROU</s3><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>6 aut.</sZ></inist:fA14><country>Roumanie</country><wicri:noRegion>077125 Bucharest-Magurele</wicri:noRegion></affiliation></author></titleStmt><publicationStmt><idno type="inist">13-0279485</idno><date when="2013">2013</date><idno type="stanalyst">PASCAL 13-0279485 INIST</idno><idno type="RBID">Pascal:13-0279485</idno><idno type="wicri:Area/Main/Corpus">000898</idno><idno type="wicri:Area/Main/Repository">000562</idno></publicationStmt><seriesStmt><idno type="ISSN">0268-1242</idno><title level="j" type="abbreviated">Semicond. sci. technol.</title><title level="j" type="main">Semiconductor science and technology</title></seriesStmt></fileDesc><profileDesc><textClass><keywords scheme="KwdEn" xml:lang="en"><term>Cathodic sputtering</term><term>Electrical conductivity</term><term>Electron beam deposition</term><term>Homojunction</term><term>Indium oxide</term><term>Radiofrequency sputtering</term><term>Self-assembled layer</term><term>Thin film transistor</term><term>Transport process</term></keywords><keywords scheme="Pascal" xml:lang="fr"><term>Dépôt faisceau électronique</term><term>Conductivité électrique</term><term>Pulvérisation haute fréquence</term><term>Pulvérisation cathodique</term><term>Phénomène transport</term><term>Transistor couche mince</term><term>Couche autoassemblée</term><term>Homojonction</term><term>Oxyde d'indium</term><term>In2O3</term></keywords></textClass></profileDesc></teiHeader><front><div type="abstract" xml:lang="en">Homojunction transparent thin-film In<sub>2</sub>O<sub>3</sub> transistors were fabricated at room temperature. Self-assembled In<sub>2</sub>O<sub>3</sub> source-channel-drain structures were grown by pulsed electron beam deposition using a shadow mask with a 300 μm diameter wire as an obstacle placed at ∼100 μm distance from the substrate for growing the channel region behind it. The film resistivity varies from ∼7 x 10<sup>8</sup> Ω cm in the channel region to ∼10<sup>-3</sup> Ω cm in the source-drain regions. We explain this fact by the relative depletion of the indium incorporated in the channel region of the film due to the reduced flux of ablated species arriving on the substrate behind the obstacle, leading to a relative enrichment in oxygen compared to the source and drain regions. The gate insulator is a Y<sub>2</sub>O<sub>3</sub> film grown by RF magnetron sputtering. The transistor operates in enhanced mode. The subthreshold swing is ∼0.26 V/decade with an on/off current ratio of 1.5 x 10<sup>7</sup>, and the saturation channel mobility is greater than 45 cm<sup>2</sup> V<sup>-1</sup> s<sup>-1</sup>.</div></front></TEI><inist><standard h6="B"><pA><fA01 i1="01" i2="1"><s0>0268-1242</s0></fA01><fA02 i1="01"><s0>SSTEET</s0></fA02><fA03 i2="1"><s0>Semicond. sci. technol.</s0></fA03><fA05><s2>28</s2></fA05><fA06><s2>8</s2></fA06><fA08 i1="01" i2="1" l="ENG"><s1>Self-assembled homojunction In<sub>2</sub>O<sub>3</sub> transparent thin-film transistors</s1></fA08><fA11 i1="01" i2="1"><s1>GHERENDI (Florin)</s1></fA11><fA11 i1="02" i2="1"><s1>NISTOR (Magdalena)</s1></fA11><fA11 i1="03" i2="1"><s1>ANTOHE (Stefan)</s1></fA11><fA11 i1="04" i2="1"><s1>ION (Lucian)</s1></fA11><fA11 i1="05" i2="1"><s1>ENCULESCU (Ionut)</s1></fA11><fA11 i1="06" i2="1"><s1>MANDACHE (Nicolae B.)</s1></fA11><fA14 i1="01"><s1>National Institute for Lasers, Plasma and Radiation Physics, Plasma Physics and Nuclear Fusion Laboratory, L22, PO Box. MG-36</s1><s2>077125 Bucharest-Magurele</s2><s3>ROU</s3><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>6 aut.</sZ></fA14><fA14 i1="02"><s1>Faculty of Physics, University of Bucharest, PO Box MG-11</s1><s2>077125 Bucharest-Magurele</s2><s3>ROU</s3><sZ>3 aut.</sZ><sZ>4 aut.</sZ></fA14><fA14 i1="03"><s1>National Institute of Materials Physics, PO Box MG-7</s1><s2>077125 Bucharest-Magurele</s2><s3>ROU</s3><sZ>5 aut.</sZ></fA14><fA20><s2>085002.1-085002.5</s2></fA20><fA21><s1>2013</s1></fA21><fA23 i1="01"><s0>ENG</s0></fA23><fA43 i1="01"><s1>INIST</s1><s2>21041</s2><s5>354000501912960050</s5></fA43><fA44><s0>0000</s0><s1>© 2013 INIST-CNRS. All rights reserved.</s1></fA44><fA45><s0>34 ref.</s0></fA45><fA47 i1="01" i2="1"><s0>13-0279485</s0></fA47><fA60><s1>P</s1></fA60><fA61><s0>A</s0></fA61><fA64 i1="01" i2="1"><s0>Semiconductor science and technology</s0></fA64><fA66 i1="01"><s0>GBR</s0></fA66><fC01 i1="01" l="ENG"><s0>Homojunction transparent thin-film In<sub>2</sub>O<sub>3</sub> transistors were fabricated at room temperature. Self-assembled In<sub>2</sub>O<sub>3</sub> source-channel-drain structures were grown by pulsed electron beam deposition using a shadow mask with a 300 μm diameter wire as an obstacle placed at ∼100 μm distance from the substrate for growing the channel region behind it. The film resistivity varies from ∼7 x 10<sup>8</sup> Ω cm in the channel region to ∼10<sup>-3</sup> Ω cm in the source-drain regions. We explain this fact by the relative depletion of the indium incorporated in the channel region of the film due to the reduced flux of ablated species arriving on the substrate behind the obstacle, leading to a relative enrichment in oxygen compared to the source and drain regions. The gate insulator is a Y<sub>2</sub>O<sub>3</sub> film grown by RF magnetron sputtering. The transistor operates in enhanced mode. The subthreshold swing is ∼0.26 V/decade with an on/off current ratio of 1.5 x 10<sup>7</sup>, and the saturation channel mobility is greater than 45 cm<sup>2</sup> V<sup>-1</sup> s<sup>-1</sup>.</s0></fC01><fC02 i1="01" i2="X"><s0>001D03F04</s0></fC02><fC03 i1="01" i2="3" l="FRE"><s0>Dépôt faisceau électronique</s0><s5>03</s5></fC03><fC03 i1="01" i2="3" l="ENG"><s0>Electron beam deposition</s0><s5>03</s5></fC03><fC03 i1="02" i2="X" l="FRE"><s0>Conductivité électrique</s0><s5>04</s5></fC03><fC03 i1="02" i2="X" l="ENG"><s0>Electrical conductivity</s0><s5>04</s5></fC03><fC03 i1="02" i2="X" l="SPA"><s0>Conductividad eléctrica</s0><s5>04</s5></fC03><fC03 i1="03" i2="X" l="FRE"><s0>Pulvérisation haute fréquence</s0><s5>05</s5></fC03><fC03 i1="03" i2="X" l="ENG"><s0>Radiofrequency sputtering</s0><s5>05</s5></fC03><fC03 i1="03" i2="X" l="SPA"><s0>Pulverización alta frecuencia</s0><s5>05</s5></fC03><fC03 i1="04" i2="X" l="FRE"><s0>Pulvérisation cathodique</s0><s5>06</s5></fC03><fC03 i1="04" i2="X" l="ENG"><s0>Cathodic sputtering</s0><s5>06</s5></fC03><fC03 i1="04" i2="X" l="SPA"><s0>Pulverización catódica</s0><s5>06</s5></fC03><fC03 i1="05" i2="X" l="FRE"><s0>Phénomène transport</s0><s5>07</s5></fC03><fC03 i1="05" i2="X" l="ENG"><s0>Transport process</s0><s5>07</s5></fC03><fC03 i1="05" i2="X" l="SPA"><s0>Fenómeno transporte</s0><s5>07</s5></fC03><fC03 i1="06" i2="X" l="FRE"><s0>Transistor couche mince</s0><s5>11</s5></fC03><fC03 i1="06" i2="X" l="ENG"><s0>Thin film transistor</s0><s5>11</s5></fC03><fC03 i1="06" i2="X" l="SPA"><s0>Transistor capa delgada</s0><s5>11</s5></fC03><fC03 i1="07" i2="X" l="FRE"><s0>Couche autoassemblée</s0><s5>15</s5></fC03><fC03 i1="07" i2="X" l="ENG"><s0>Self-assembled layer</s0><s5>15</s5></fC03><fC03 i1="07" i2="X" l="SPA"><s0>Capa autoensamblada</s0><s5>15</s5></fC03><fC03 i1="08" i2="X" l="FRE"><s0>Homojonction</s0><s5>16</s5></fC03><fC03 i1="08" i2="X" l="ENG"><s0>Homojunction</s0><s5>16</s5></fC03><fC03 i1="08" i2="X" l="SPA"><s0>Homounión</s0><s5>16</s5></fC03><fC03 i1="09" i2="X" l="FRE"><s0>Oxyde d'indium</s0><s5>17</s5></fC03><fC03 i1="09" i2="X" l="ENG"><s0>Indium oxide</s0><s5>17</s5></fC03><fC03 i1="09" i2="X" l="SPA"><s0>Indio óxido</s0><s5>17</s5></fC03><fC03 i1="10" i2="X" l="FRE"><s0>In2O3</s0><s4>INC</s4><s5>52</s5></fC03><fN21><s1>266</s1></fN21></pA></standard></inist></record>Pour manipuler ce document sous Unix (Dilib)
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